cStrider High Power Probe Card

Cohu’s production-proven test cell solutions enable the high-voltage and high-current requirements to ramp power bare die silicon carbide (SiC) MOSFETs and Schottky diodes, and gallium nitride high electron mobility transistors (GaN HEMTs) automotive and industrial devices. Patent pending Volta-flux™ high-power density solution enables identical contact elements for singulated power Known Good Die (KGD) and wafer probing, with field-replaceable MEMS probes providing significantly lower cost of test.

cStrider wafer probing high parallel test solution innovative pressure-level control during high-voltage test process enables probing efficiency on wafer edges. Single pin replacement allows on-site repair providing significant lower cost of test.

• Efficient heat dissipation extends lifetime at high current density
• SiC and GaN wide-bandgap wafer test up to 200^oC
• Multi-site press control technology for high-voltage testing improves yield and test efficiency
• Scalable design provides flexibility to field-upgrade test parallelism up to 32 sites, delivering lower cost of test
• Robust modular horizontal MEMS probes provide high current carrying capability up to 1000 A per die
• Innovative pressure-level control during high-voltage test increases probing efficiency on wafer edge up to 3000 Volts⁽¹⁾

^{(1) Patent Pending}