SiC and GaN Wide Bandgap
Production-Proven Test Cell Solutions
High Performance
Production-proven solution for high-volume performance
Cohu’s production-proven test cell solutions enable the high-voltage and high-current requirements to ramp power bare die silicon carbide (SiC) MOSFETs and Schottky diodes, and gallium nitride high electron mobility transistors (GaN HEMTs) automotive and industrial devices. Patent pending Volta-flux™ high-power density solution enables identical contact elements for singulated power Known Good Die (KGD) and wafer probing, with field-replaceable MEMS probes providing significantly lower cost of test.
- High-voltage static parameter tests up to 6,500 V
- High-current dynamic switching test up to 5,000 A
- Patent pending Volta-Flux MEMS probe architecture enabling at-speed testing of power devices
- Environmental control to prevent arcing
- Low stray inductance enables fast dynamic switching down to 25 nH
- NV-Core Inspection System provides full final inspection and unit-level traceability from wafer input to tape & reel output
- DI-Core Data Intelligence System providing real-time equipment monitoring and data analytics for increased productivity
Addressing the high-voltage and high-current demands for SiC and GaN automotive and industrial devices
Power SiC Diodes
Power SiC MOSFET
Power GaN HEMT
Singulated Power Known Good Die
All-in-one test cell solution including handler, inspection & metrology and contacting
7K UPH
Up to 7,000 UPH @ 150 ms test time in a complete finishing solution
Die Handling
Delicate thin bare die handling down to 50 µm, with controlled contactor insertion assisted by NV-Core Inspection System
Single Insertion
Unique single insertion with controlled probe marks less than 1 µm
Device Tests
Full range of device tests: static and dynamic, gate resistance, avalanche and short circuit
Data Analytics
Optimized yield and defect detection through real-time Artificial Intelligence inspection
NY32W KGD
Fully automatic optical testing, visual inspection and die sorting solution. Provides customers with the stringent quality required for the automotive industry, while delivering higher productivity and lower cost.
KGD Handling, Inspection & Metrology Solution
- Up to 7,000 UPH @ 150 ms test time
- Wide applicable device packages 1 mm to 12 mm, Bare Die (MOSFET, IGBT, SiC)
- Production-proven thin bare die handling down to 50 μm with controlled contactor insertion assisted by NV-Core Inspection System
- KGB test table with up to 4 tests through single insertion
- Pin to pad alignment with advanced inspection
- High power post singulation testing through single insertion with final inspection and full traceability from Wafer Input to Tape & Reel Output
- Full device ID traceability and process flow
- Ability to see through silicon, inspecting the structure underneath the surface; top, bottom, side and in-tape infrared inspection for improved production yield
cGator Singulated Power Contactor
Top and Bottom Contacting Solution for Power KGD. Volta-Flux MEMS probe technology provides stable and low CRES for very challenging high-voltage and high-current requirements.
Common contact architecture enabling power at-speed testing
- Field replaceable MEMS probes provide significantly lower cost of test
- Unique single insertion with controlled probe marks less than 1 µm
- Innovative pressure control to prevent arcing during high voltage test
- Patent pending Volta-Flux high-power density technology enables efficient die heat dissipation under test
- Suitable for dynamic high-current switching and short circuit test
- Unique top/bottom die contacting with precisely controlled probe marks
- High-power test parameters up to 6,500 V and 5,000 A
DI-Core Data Intelligence System
Enables automation and optimization of the test process
Real-time equipment monitoring and data analytics for I4.0/Factory Automation
- Real-time equipment monitoring and management
- Preventative maintenance
- Central recipe management
- Optimized yield and defect detection through real-time Artificial Intelligence inspection
- Knowledge database and unified reports
cStrider Probe Card
Wafer Probing High Parallel Test Solution
Identical contact elements for power KGD and wafer probing
- New innovative pressure-level control during high-voltage test process enables probing efficiency on wafer edges
- Scalable design provides flexibility to field-upgrade test parallelism from x1 up to x32
- Single pin replacement allows on-site repair providing significantly lower cost of test
- High voltage test up to 2,500 V
- Maximum current up to 1,000 A
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